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Samsung 990 EVO Plus SSD 2TB, PCIe Gen 4x4, Gen 5x2 M.2 2280, Speeds Up-to 7,250 MB/s, Upgrade Storage for PC/Laptops, HMB Technology and Intelligent Turbowrite 2.0
Samsung 990 EVO Plus SSD 2TB, PCIe Gen 4x4, Gen 5x2 M.2 2280, Speeds Up-to 7,250 MB/s, Upgrade Storage for PC/Laptops, HMB Technology and Intelligent Turbowrite 2.0
$50.71
Original: $144.90
-65%Samsung 990 EVO Plus SSD 2TB, PCIe Gen 4x4, Gen 5x2 M.2 2280, Speeds Up-to 7,250 MB/s, Upgrade Storage for PC/Laptops, HMB Technology and Intelligent Turbowrite 2.0—
$144.90
$50.71The Story
Specifications
| Model Code (Capacity) | MZ-V9S2T0BW (2TB) |
| General Features | |
| Application | Client PCs |
| Form Factor | M.2 (2280) |
| Interface | PCIe® Gen 4.0 x4 / 5.0 x2 NVMe™ 2.0 |
| Dimension (WxHxD) | 80.15 x 22.15 x 2.38mm |
| Weight | Max 9.0g |
| Storage Memory | Samsung V-NAND TLC |
| Controller | Samsung in-house Controller |
| Cache Memory | HMB (Host Memory Buffer) |
| Special Features | |
| TRIM Support | Supported |
| S.M.A.R.T Support | Supported |
| GC (Garbage Collection) | Auto Garbage Collection Algorithm |
| Encryption Support | AES 256-bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted Drive) |
| WWN Support | Not Supported |
| Device Sleep Mode Support | Yes |
| Performance | |
| Sequential Read | Up to 7,250 MB/s |
| Sequential Write | Up to 6,300 MB/s |
| Random Read (4KB, QD32) | Up to 1,000,000 IOPS |
| Random Write (4KB, QD32) | Up to 1,350,000 IOPS |
| Environment | |
| Average Power Consumption | Read 4.6W / Write 4.2W |
| Power Consumption (Idle) | Typical 60mW for all capacities |
| Power Consumption (Sleep) | Typical 5mW for all capacities |
| Allowable Voltage | 3.3V ± 5% |
| Reliability (MTBF) | 1.5 Million Hours |
| Operating Temperature | 0 - 70°C |
| Shock Resistance | 1,500 G & 0.5 ms (Half sine) |
Details & Craftsmanship
Every detail has been carefully considered to bring you the perfect product.
Details & Craftsmanship
Every detail has been carefully considered to bring you the perfect product.
Details & Craftsmanship
Every detail has been carefully considered to bring you the perfect product.
Details & Craftsmanship
Every detail has been carefully considered to bring you the perfect product.
Details & Craftsmanship
Every detail has been carefully considered to bring you the perfect product.
Details & Craftsmanship
Every detail has been carefully considered to bring you the perfect product.
Description
Specifications
| Model Code (Capacity) | MZ-V9S2T0BW (2TB) |
| General Features | |
| Application | Client PCs |
| Form Factor | M.2 (2280) |
| Interface | PCIe® Gen 4.0 x4 / 5.0 x2 NVMe™ 2.0 |
| Dimension (WxHxD) | 80.15 x 22.15 x 2.38mm |
| Weight | Max 9.0g |
| Storage Memory | Samsung V-NAND TLC |
| Controller | Samsung in-house Controller |
| Cache Memory | HMB (Host Memory Buffer) |
| Special Features | |
| TRIM Support | Supported |
| S.M.A.R.T Support | Supported |
| GC (Garbage Collection) | Auto Garbage Collection Algorithm |
| Encryption Support | AES 256-bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted Drive) |
| WWN Support | Not Supported |
| Device Sleep Mode Support | Yes |
| Performance | |
| Sequential Read | Up to 7,250 MB/s |
| Sequential Write | Up to 6,300 MB/s |
| Random Read (4KB, QD32) | Up to 1,000,000 IOPS |
| Random Write (4KB, QD32) | Up to 1,350,000 IOPS |
| Environment | |
| Average Power Consumption | Read 4.6W / Write 4.2W |
| Power Consumption (Idle) | Typical 60mW for all capacities |
| Power Consumption (Sleep) | Typical 5mW for all capacities |
| Allowable Voltage | 3.3V ± 5% |
| Reliability (MTBF) | 1.5 Million Hours |
| Operating Temperature | 0 - 70°C |
| Shock Resistance | 1,500 G & 0.5 ms (Half sine) |
